Boron Nitride Ceramic Components

Boron Nitride Ceramic Components
Details:
Boron nitride precision ceramic components can be made into boron nitride spare parts for ion implantation equipment, boron nitride insulating gaskets and seals for high-temperature equipment
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Technical Parameters

Boron nitride precision ceramic components can be made into boron nitride spare parts for ion implantation equipment, boron nitride insulating gaskets and seals for high-temperature equipment, boron nitride parts for vacuum coating equipment (replacing alumina), and powder metallurgy atomization nozzles. , semiconductor, microelectronics and other equipment parts, high-temperature fluid filters, radiation protection clothing, high-temperature furnace linings and insulation materials.

 

Boron nitride plate is made of the internationally advanced hot-pressing sintering process without adding any sintering aids. It has the characteristics of high initialization, good stability, high density, low thermal expansion coefficient, good thermal conductivity and insulation properties, and can be used as an ion implanter. Equipment boron nitride spare parts, boron nitride insulating gaskets and seals for high-temperature equipment, boron nitride parts (replacements) for vacuum coating equipment, powder metallurgy atomization nozzles, semiconductors, microelectronics and other equipment parts.Boron nitride fibers can be used as high-temperature fluid filters, radiation protection clothing, high-temperature furnace linings and insulation materials With excellent processing performance, it can be precisely processed to an accuracy of 0.01mm, making it one of the best choices for customizing precision ceramic component.

 

Boron Nitride Ceramic Components Index

 

Material

Boron Nitride

Density

>2.05g/cm ³

Oxygen Content Rate

0.4664%

Porosity Rate

>150Mpa

Coefficient of thermal expansion (25℃-1200℃)

-1-2.5*10-6/K

Flexural Strength

>35Mpa

MAX-Temperature of use

900℃-2300℃

Thermal conductivity (25℃)

50W/mk

Resistivity

>10Ω.cm

 

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