JXC Precision Ceramics Co., Ltd has recognized expertise in custom high-tech ceramic conponent solution field, such as BN, B4C, AlN. We offer a broad range of high perfermance evaporation boat for plating industry, BN, B4C, AlN precision ceramic components in plating industry, medical industry, electronics, nuclear power, oil&gas power generation. Since its establishment in 1999, we have experienced three stages of continuous development, and have been constantly strengthening our cooperative research and development capabilities on the basis of stable products to provide customers with more professional designs and products.
Why Choose Us
Rich experience
In the field of vacuum hot pressing and sintering preparation of boron nitride, boron carbide, aluminum nitride ceramics, we have accumulated profound production experience and are proud to have an elite team composed of many senior industry experts and technicians.
Excellent team
Our company boasts strong technical capabilities, including 2 senior engineers, 3 professional engineers, and over 50 technical personnel of various types. Our research team is comprised of 3 professors and 6 doctoral students, whose expertise and research capabilities provide a solid foundation for our technological innovation and product development.
Our Patents
Moreover, our company currently holds 4 patents related to boron nitride, boron carbide and aluminum nitride ceramic materials. These patents not only demonstrate our profound technical expertise in this field but also provide a solid foundation for us to continuously launch innovative products and meet customer needs.
Advanced Equipment
Our production workshop not only boasts advanced production equipment and precise inspection methods, but also emphasizes the cleanliness and orderliness of the workshop environment and the implementation of lean management.
H-BN has a layered structure similar to graphite, showing good electrical insulation, thermal conductivity, and chemical stability, and can maintain these properties at high temperatures.
Boasting excellent thermal conductivity and low thermal expansion coefficient, AlN is an outstanding material for thermal shock resistance.
Titanium diboride (TiB₂), as a high-performance material, exists as a gray or gray-black powder with a hexagonal crystal structure. It boasts a melting point of 2900°C, a hardness (HV) of 34GPa, and a density of 4.52.
Aluminum Nitride (AlN) is an atomic crystal belonging to diamond-like nitrides, which can maintain stability up to 2200°C. It exhibits high strength at room temperature, and its strength decreases relatively slowly with the increase in temperature. Boasting excellent thermal conductivity and low thermal expansion coefficient, AlN is an outstanding material for thermal shock resistance. Its strong resistance to molten metal erosion makes it an ideal crucible material for melting and casting pure iron, aluminum, or aluminum alloys. Additionally, AlN is an electrical insulator with good dielectric properties, showing promising potential for use as electrical components. An AlN coating on gallium arsenide surfaces can protect it from ion implantation during annealing.
Benefits of Aluminum Nitride Powder
High thermal conductivity
Conducting the heat away efficiently from high current or high-power electronic components to prevent them from overheating and improving the lifecycle and reliability of all the electronic components is the main leverage.
Electrical insulation
Excellent insulation properties of the alumina circuit boards are applied when high-voltage components are incorporated in a pcb with minimal clearance distance from each other. The isolation is better than fr4 or other silicon materials.
Thermal expansion stability
The thermal coefficient is low and the property is to expand less under thermal stress for aluminum nitride powder. This can be used along with silicon and make other semiconductor products perform under ideal conditions.
Durability
The robust nature of aluminum nitride powder provides mechanical and chemical stability ensuring the longevity of the product performance and reliability in automotive, aerospace, or medical environments.
Non-toxicity
The non-toxic nature of the aluminum nitride powder helps in manufacturing and handling with ease.
Types of Aluminum Nitride Powder
Direct Bond Copper Aluminum Nitride PCB
Copper Film or copper layer is directly bonded to Aluminium Nitride ceramic substrate using the high-temperature oven. This copper layer is sandwiched with the substrate with a dielectric insulator in between them. The copper layer is etched in the later stage to form electronic circuits.
Thick Film Aluminum Nitride PCB
If the Aluminium Nitride substrate is coated with Thick conductive material such as Silver (Ag) or Gold (Au) to form a conductive layer. This layer is etched but can be used only for low-power or medium-level current conduction applications.
Substrate materials and packaging materials
With the vigorous development of microelectronics and semiconductor technology, current-power semiconductor devices need to have high voltage, high current, high power density, small size, and other characteristics at the same time. The heat flow density of electronic substrates has increased significantly, and maintaining a stable operating environment inside the equipment has become a focus.
Electrostatic chuck for wafer processing
The wafer processing process in modern semiconductor manufacturing processes involves multiple processes. The wafers need to be transferred back and forth between hundreds of process equipment, so a device is needed to clamp the wafers. The electrostatic chuck can fix the wafer through electrostatic adsorption. The adsorption force is uniform and stable. The wafer will not warp and deform, ensuring the processing accuracy and cleanliness of the wafer. The current common electrostatic chuck technology mainly uses alumina ceramics or aluminum nitride ceramics as the main material. For ordinary silicon wafer processing, high-purity alumina or sapphire can meet the requirements.
Substrate material
AlN crystal is an ideal substrate for GaN, AlGaN, and AlN epitaxial materials. Compared with sapphire or SiC substrates, AlN and GaN have higher thermal matching and chemical compatibility, and less stress between the substrate and the epitaxial layer. Therefore, when AlN crystal is used as a GaN epitaxial substrate, it can greatly reduce the defect density in the device, improve the performance of the device, and have good application prospects in the preparation of high-temperature, high-frequency, and high-power electronic devices. In addition, using AlN crystal as an AlGaN epitaxial material substrate with a high aluminum (Al) component can also effectively reduce the defect density in the nitride epitaxial layer and greatly improve the performance and service life of nitride semiconductor devices. High-quality solar blind detectors based on AlGaN have been successfully used.
Thin film materials
Due to AlN's wide band gap, strong polarization, and bandgap width of 6.2eV, the aluminum nitride thin film material prepared by it has many excellent physical and chemical properties, such as high breakdown field strength, high thermal conductivity, high resistivity, and high Due to its chemical and thermal stability, as well as good optical and mechanical properties, it is widely used as an isolation medium and insulating material in the packaging of electronic devices and integrated circuits. The high-quality AlN film also has the characteristics of extremely high ultrasonic transmission speed, small acoustic wave loss, considerable piezoelectric coupling constant, and thermal expansion coefficient similar to Si and GaAs.
Properties of Aluminum Nitride Powder
Thermal Conductivity
The incredible thermal conductivity ranges from 120 to 200W/mK. This property of the Aluminum Nitride PCB helps with thermal management in applications like RF/ Microwave or high-power switching devices.
Thermal Expansion
The thermal expansion is low when compared to similar silicon materials. The coefficient of thermal expansion is CTE< 4ppm/C which reduces the failure of components as the dielectric strength is also higher.
Electrical Insulation
Ceramic by nature possesses excellent insulation properties which ensures no electrical leakage and isolates electronic components with 10^12 to 10^13 ohms centimeter. This also ensures signal integrity in high voltage and high current applications.
Dielectric Properties
The dielectric constant is low and ranges from 8.5 to 10 and its low dielectric loss is preferable in designing high-frequency and high-speed electronic applications.
Temperature Resistance
The operating temperatures can be as high as> 350 degrees Celsius. The melting point of the Alumina circuit board is over 2000 degrees Celsius as it also maintains structural stability at higher temperatures.
How to Choose Aluminum Nitride Powder
Thermal expansion effects
When attaching large dies or components to aluminum nitride powder, consider the thermal expansion characteristics of both the pcb and the components. Mismatched thermal expansion coefficients can result in mechanical stress and reliability problems.
Thermal vias
Enhance thermal management by strategically placing thermal vias underneath hot devices. These vias help dissipate heat efficiently through the pcb.
Ground planes
Ground planes can further improve high-frequency performance by reducing signal interference and enhancing signal integrity. Incorporate ground planes where necessary, especially in rf and microwave applications.
Material behavior and processes
Understand the behavior of aln material during fabrication processes and assembly procedures. This knowledge is crucial for ensuring the reliability and performance of aluminum nitride powder.
High-frequency considerations
Pay special attention to high-frequency signal routing, impedance control, and minimizing signal losses. Aluminum nitride powder excel in high-frequency applications, so optimize the layout accordingly.
Thermal management
Aluminum nitride powder are known for their superior thermal conductivity. Leverage this property by designing efficient heat dissipation mechanisms, especially in applications with high-power components.
Substrate Manufacturing
AlN powder is formed into a billet through cold isostatic pressing (CIP). This process involves compressing the AlN powder into a dense, cylindrical shape using hydraulic pressure.Binder materials are added to the AlN powder to facilitate the handling of the material during shaping and sintering.The shaped billet is sintered at temperatures above 1800°C in a nitrogen atmosphere. Sintering fuses the AlN powder particles together, creating a fully dense ceramic substrate with excellent thermal properties.The AlN board is precisely ground and polished down to the specified thickness, ensuring a smooth and uniform surface for subsequent processing.
Metallization
Thick film pastes containing materials like tungsten or molybdenum are screen-printed onto the AlN substrate to create circuit traces. These thick film materials are known for their durability and ability to withstand high temperatures.Thin film metals such as copper or gold can also be deposited onto the substrate using techniques like sputtering or plating.High-temperature firing is used to bond the metallization to the AlN substrate, ensuring a reliable electrical connection.
Multilayer Buildup
For complex PCBs, multiple AlN substrates (double-sided boards) can be stacked and laminated together using adhesive films. This allows for the creation of multilayer PCBs.Vias and through holes are laser-drilled through the stacked layers and filled with conductive pastes, creating electrical connections between layers.In some cases, blind and buried vias can be used to connect inner layers, providing additional routing options.
Housing Integration
AlN substrates are well-suited for direct bonding into hermetic packages, where electronic components are sealed for protection.Sealants like epoxy, brazing materials, or glass can be used to create hermetic seals, ensuring the integrity of the enclosed electronics.
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